Samsung has introduced that it has began mass manufacturing of its new Eighth-Gen Vertical NAND, the corporate has mentioned that that is the business’s highest bit density.
The brand new 1TB V-NABD is the very best storage capability thus far, it’s designed to allow bigger storage within the next-generation enterprise servers.
“As market demand for denser, greater-capacity storage pushes for larger V-NAND layer counts, Samsung has adopted its superior 3D scaling expertise to cut back floor space and top, whereas avoiding the cell-to-cell interference that usually happens with cutting down,” mentioned SungHoi Hur, Govt Vice President of Flash Product & Know-how at Samsung Electronics. “Our eighth-generation V-NAND will assist meet quickly rising market demand and higher place us to ship extra differentiated merchandise and options, which will likely be on the very basis of future storage improvements.”
Samsung was in a position to attain the business’s highest bit density by considerably enhancing the bit productiveness per wafer. Primarily based on the Toggle DDR 5.0 interface* — the most recent NAND flash normal — Samsung’s eighth-generation V-NAND options an enter and output (I/O) velocity of as much as 2.4 gigabits per second (Gbps), a 1.2X increase over the earlier era. It will allow the brand new V-NAND to accommodate the efficiency necessities of PCIe 4.0, and later, PCIe 5.0.
You’ll find out extra particulars concerning the new Samsung Eighth-Gen Vertical NAND over on the Samsung web site on the hyperlink beneath.
